Mo-Doped La2O3 as Charge-Trapping Layer for Improved Low-Voltage Flash-Memory Performance

Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trapping Layer

Crystalline ZrTiO4 (ZTO) in orthorhombic phase with different plasma treatments was explored as the charge-trapping layer for low-voltage operation flash memory. For ZTO without any plasma treatment, even with a high k value of 45.2, it almost cannot store charges due the oxygen vacancies-induced shallow-level traps that make charges easy to tunnel back to Si substrate. With CF4 plasma treatmen...

Dual phase TiO(x)N(y)/TiN charge trapping layer for low-voltage and high-speed flash memory application.

Flash memory using a dual phase TiO(x)N(y)/TiN charge trapping layer has been fabricated and its electrical properties were investigated. The TiO(x)N(y)/TiN layer was formed by partial oxidation of a pre-deposited TiN layer, and the formation of TiO(x)N(y)/SiO(x)N(y) was confirmed by high-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), and X-ray photoelectron spect...

Nb-doped Gd2O3 as charge-trapping layer for nonvolatile memory applications

Nb-doped Ga2O3 as charge-trapping layer for nonvolatile memory applications

High-Performance Few-layer Mo-doped ReSe2 Nanosheet Photodetectors

Transition metal dichalcogenides (TMDCs) have recently been the focus of extensive research activity owing to their fascinating physical properties. As a new member of TMDCs, Mo doped ReSe2 (Mo:ReSe2) is an octahedral structure semiconductor being optically biaxial and highly anisotropic, different from most of hexagonal layered TMDCs with optically uniaxial and relatively high crystal symmetry...